Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 34: Poster Session I (Graphene; Plasmonics and nanooptics; Coherence and coherent control in nanophotonics and plasmonics)
O 34.7: Poster
Tuesday, March 27, 2012, 18:15–21:45, Poster E
Production of Nitrogen-Doped Graphene via Low Energy Nitrogen Bombardment — •Wei Zhao1, Olive Höfert1, Karin Gotterbarm1, Junfa Zhu2, Christian Papp1, and Hans-Peter Steinrück1 — 1Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen — 2National Synchrotron Radiation Laboratory, UniVersity of Science and Technology of China, Hefei 230029, Peoples Republic of China
Tailoring the electronic structure of graphene by chemical modification of graphene represents a crucial route to the synthesis of a new class of semiconductor materials. The covalent introduction of nitrogen might pave a way to use tailored graphene in electronic devices. Herein, we report a simple procedure to insert nitrogen atoms into graphene by low energy nitrogen bombardment, forming nitrogen-doped graphene. Applying high resolution X-ray photoelectron spectroscopy, different carbon-nitrogen species in the nitrogen-doped graphene sheet are identified. Additionally, the distribution of nitrogen in its doping sites and the doping level becomes available. The doping level and doping sites of nitrogen-doped graphene can be varied by changing the nitrogen bombardment energies and times.
Support is acknowledged from the BMBF (05 ES3XBA/5) and the Cluster of Excellence "Engineering of Advanced Materials".