Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 35: Poster Session II (Polymeric biomolecular films; Nanostructures; Electronic structure; Spin-orbit interaction; Phase transitions; Surface chemical reactions; Heterogeneous catalysis; Particles and clusters; Surface magnetism; Electron and spin dynamics; Surface dynamics; Methods; Electronic structure theory; Functional molecules)

O 35.33: Poster

Dienstag, 27. März 2012, 18:15–21:45, Poster B

Formation of an ideal Schottky barrier by Au/n-type β-Ga₂O₃ — •Mansour Mohamed¹, Christoph Janowitz¹, Klaus Irmscher², and Recardo Manzke¹ — ¹Institute of Physics, Humboldt University of Berlin, Newtonstr. 15, D-12489 Berlin, Germany — ²Leibniz Institute for Crystal Growth, Max-Born-Str. 2, D - 12489 Berlin, Germany

High resolution angular-resolved photoelectron spectroscopy (ARPES) was applied to study the formation of a Schottky barrier on cleaved β-Ga₂O₃ single crystals with a carrier concentration of 6x10¹⁶ cm⁻³, which were grown by the Czochralski method. A coverage-dependent surface photovoltage effect induced by the synchrotron radiation was observed. The shift of the valence band- and semicore- states at low Au- coverage and the work functions of Au and β-Ga₂O₃ were determined in situ by ARPES. From these experimental data the Schottky barrier height was found to be 1.01 eV in nearly perfect agreement to the value of 1.07 eV obtained from the current-voltage characteristics. The system Au/n-type β-Ga₂O₃ matches nearly ideally the characteristics of a pure Schottky barrier.