Berlin 2012 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 42: Nanostructures at surfaces I

O 42.7: Vortrag

Mittwoch, 28. März 2012, 12:00–12:15, MA 042

Pb nanowire induced facetting of Si(557) surfaces — •Sebastian Gevers¹, Thomas Weisemoeller¹, Christoph Tegenkamp², and Joachim Wollschläger¹ — ¹Fachbereich Physik, Universitaet Osnabrueck, Barbarastr. 7, 49069 Osnabrueck — ²Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover

Nanowires are of fundamental interest to study electronic correlations in low-dimensional systems which cause strong deviations from simple Fermi-liquid behavior. Here, the possibility to manipulate and to characterize these structures with a variety of techniques offer a wide field for scientific research. In particular anisotropic surface transport is interesting since it directly probes inherent electronic instabilities in these low-dimensional structures.

Since long-range ordering is required to perform transport measurements, Si(557) surfaces with high step stiffness are used as a substrate to grow arrays of crystalline Pb nanowires. Furthermore, it has been reported that the system switches from 2D to 1D conductivity which is correlated with structure phase transitions. In the present work, the surface structure and morphology of substrate and nanowires is investigated by grazing incidence x-ray diffraction (GIXRD) and spot profile low energy electron diffraction (SPALEED). It is shown that a layer by layer growth of Pb can be obtained and that refacetting of the Si(557) substrate occurs at elevated substrate temperatures. In particular we take advantage of the high precision of the GIXRD experiment to characterize the refacetting.