Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 51: Oxides and insulators: Epitaxy and growth
O 51.3: Talk
Wednesday, March 28, 2012, 17:15–17:30, HE 101
Oxide growth on zinc in different atmospheres — •Ying Chen1, 2, Juan Zuo3, Paul Schneider1, and Andreas Erbe1 — 1Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237, Düsseldorf, Germany — 2Center for Electrochemical Sciences, Ruhr-Universität Bochum, Bochum, Germany — 3Department of Mechanical Engineering, Xiamen University of Technology, Xiamen, China
The oxide layer formed on Zn surface in oxidising and non-oxidising humid and dry atmospheres was investigated by spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS). XPS sputter profiles, analysis of the Auger LMM peaks, as well as SE analysis provide strong evidence for the presence of metallic Zn inside the oxide layer [1]. The growth kinetics of the oxide films were measured in a specially designed optical cell. By controlling the growth conditions, such as gas atmosphere (air, argon, oxygen) and humidity, the growth of the oxide layer was studied by in-situ SE measurements over 72 h. It was found that a two-stage growth process of the film is present. Overall growth rate increases in the increasing of the concentration of oxygen in the atmosphere, with a further effect of the presence of humidity. Furthermore, changes in the absorption coefficient indicate changes in electronic structure of the films in the initial phase of the growth, but much faster than the first phase of the thickness increase [2]. REFERENCE: [1] J. Zuo, A. Erbe, Phys. Chem. Chem. Phys., 12 (2010) 11467-11476. [2] Y. Chen, P. Schneider, A. Erbe, Phys. Stat. Solidi C, submitted.