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O: Fachverband Oberflächenphysik

O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)

O 58.46: Poster

Mittwoch, 28. März 2012, 18:15–21:45, Poster B

Preparation and in-situ analysis of MOVPE-prepared Si(111) surfaces — •Thomas Haensel¹, Weihong Zhao¹, Henning Döscher^1,2, Sebastian Brückner¹, Peter Kleinschmidt³, Oliver Supplie², Matthias M. May², and Thomas Hannappel^1,3 — ¹Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, Gustav-Kirchhoff-Straße 5, D-98684 Ilmenau — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin — ³CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, D-99099 Erfurt

III-V nanowires are one example for new solar cell concepts aiming at high efficiency. Compared to III-V wafers, silicon substrates benefit from low cost and mature high quality manufacturing. Generally, III-V nanowires are prepared on {111} surfaces. While the preparation of pristine Si(111) is well-established in ultra-high vacuum (UHV), little is known about the preparation of Si(111) surfaces grown in metal organic vapor phase epitaxy (MOVPE) ambient. A contamination-free transfer system enables us to relate in situ reflection anisotropy spectroscopy (RAS) and UHV based techniques such as scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). Similarly, we analyzed the nucleation of GaP on Si(111).