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O: Fachverband Oberflächenphysik

O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)

O 58.47: Poster

Mittwoch, 28. März 2012, 18:15–21:45, Poster B

Double layer steps on Silicon(100) prepared in H₂ ambient — •Wei Hong Zhao², Johannes Luczak¹, Peter Kleinschmidt^1,3, Sebastian Brückner^1,2, Henning Döscher^1,2, Oliver Supplie¹, and Thomas Hannappel^1,2,3 — ¹Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — ²TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — ³CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt

Preparation of double-layer steps is important for heteroepitaxial growth of III-V semiconductors on Si(100). Single-layer steps on Si(100) are associated with the presence of two domains with different dimer orientations on the reconstructed surface, leading to the initiation of anti-phase domains (APDs) in the epitaxial III-V layer. Our process consists of deoxidation, homoepitaxial growth employing silane, annealing and cooling in hydrogen ambient. We studied the surface structure using Fourier-transform infrared spectroscopy, low-energy electron diffraction and scanning tunneling microscopy (STM). STM measurements on Si(100) show the formation of D_A and D_B - double-steps on a surface with an intermediate offcut of 2^∘ in [011] direction dependent on cooling procedere. The STM images on 6^∘ misoriented samples revealed a preference for D_B double layer steps.