Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 65: Graphene V
O 65.7: Talk
Thursday, March 29, 2012, 12:00–12:15, MA 041
Transfer methods of large-scale graphene — •Marco Kraft1,2, Marc A. Gluba2, Gerald Troppenz2, and Norbert H. Nickel2 — 1Institut für Physik, Humboldt Universität zu Berlin — 2Helmholtz Zentrum Berlin für Materialien und Energie GmbH
Graphene has attracted significant attention due to its unusual high carrier mobility and low sheet resistivity. It would be diserable to combine these outstanding properties with the already established technology of silicon. Unfortunately, it is not possible to grow large-scale graphene on silicon. Hence, graphene has to be grown on foreign substrates and subsequently transferred to the silicon based device. Different approaches for this transfer process (e.g. by adhesive foils, protective resist, etc.) are compared by means of their transfer efficiency. For this purpose large scale graphene was grown by low-pressure chemical vapor deposition (CVD) on copper using methane as a precursor. Raman spectroscopy on the as-grown graphene revealed characteristic defect modes, which might be due to the non planar surface of the copper foil. Afterwards the graphene layer was transferred on a Si/SiO2 substrate by using different methods. The transfer process is monitored by raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM) and the resulting graphene layers are compared with samples from mechanical exfoliation on mica muscovite as de facto standard for high quality graphene.