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10:30 |
O 65.1 |
The Suitability of Single Crystal Metal Films as Substrates for Graphene Growth — •Patrick Zeller, Michael Weinl, Matthias Schreck, and Joost Wintterlin
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10:45 |
O 65.2 |
Epitaxial growth of graphene on Ir(111) by liquid precursor deposition — •Samuel Grandthyll, Frank Müller, Christian Zeitz, Karin Jacobs, Stefan Hüfner, Stefan Gsell, and Matthias Schreck
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11:00 |
O 65.3 |
Local tunneling spectroscopy of the Hydrogen-induced impurity state in quasi-freestanding graphene — •Ronny Schlegel, Martha Scheffler, Danny Haberer, Rico Pohle, Torben Hänke, Alexander Grüneis, Christian Hess, and Bernd Büchner
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11:15 |
O 65.4 |
Investigation of the electronic structure of bilayer graphene on Ni(111) — •Martin Weser, Roland Koch, Elena Voloshina, Alex Generalov, Hendrik Vita, Thomas Seyller, Karsten Horn, and Yuriy S. Dedkov
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11:30 |
O 65.5 |
DFT studies of Graphene on Ni(111) and Surface Nickel Carbide Ni2C — •Andreas Garhofer, Peter Jacobsen, Bernhard Stoeger, Gareth S. Parkinson, Michael Schmid, Roman Caudillo, Florian Mittendorfer, Josef Redinger, and Ulrike Diebold
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11:45 |
O 65.6 |
Freely spanned graphene membranes from epitaxal graphene — •Daniel Waldmann, Johannes Jobst, Konrad Ullmann, Felix Fromm, Sebastian Bauer, Benjamin Butz, Jan Englert, Thomas Seyller, Patirk Schmuki, Erdman Spieker, and Heiko Weber
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12:00 |
O 65.7 |
Transfer methods of large-scale graphene — •Marco Kraft, Marc A. Gluba, Gerald Troppenz, and Norbert H. Nickel
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12:15 |
O 65.8 |
Conversion of aromatic self-assembled monolayers on Cu substrates into graphene sheets — •Nils-Eike Weber, Dan Matei, Rainer Stosch, Armin Gölzhäuser, and Andrey Turchanin
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12:30 |
O 65.9 |
Extreme UV interference lithography of carbon nanomembranes and graphene — •Andreas Winter, Annika Willunat, Michaela Vockenhuber, Yasin Ekinci, Andre Beyer, Armin Gölzhäuser, and Andrey Turchanin
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12:45 |
O 65.10 |
Layer-by-layer engineering of novel 2D carbon materials with tunable optical, chemical and electrical properties — •Andrey Turchanin, Christoph Nottbohm, André Beyer, Rainer Stosch, and Armin Gölzhäuser
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