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O: Fachverband Oberflächenphysik

O 88: Electronic structure II

O 88.10: Vortrag

Freitag, 30. März 2012, 12:45–13:00, MA 043

Doped silicene: Evidence of a wide stability range — •Udo Schwingenschlögl, Yingchun Cheng, and Zhiyong Zhu — KAUST, PSE Division, Thuwal 23955-6900, Kingdom of Saudi Arabia

The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the G and D Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications.

Reference: EPL 95, 17005 (2011).