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SYRS: Symposium Resistive Switching

SYRS 1: Symposium Resistive Switching (joint symposium organized by DS, DF, KR, HL – Organizers: Gemming, Dittmann)

SYRS 1.4: Hauptvortrag

Donnerstag, 29. März 2012, 16:30–17:00, H 0105

Mechanism of resistive switching in bipolar transition metal oxides — •Marcelo Rozenberg — CNRS - LPS, Universite de Paris-Sud, 91405 Orsay, France

Resistive random access memories (RRAM) composed of a transtition metal oxide dielectric in a capacitor-like structure is a candidate technology for next generation non-volatile memory devices. We introduce a model that accounts for the bipolar resistive switching phenomenom observed in many perovskite transition metal oxides. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous distribution of oxygen vacancies and a concomitant non-volatile resistance memory effect. The theoretical results of the model are validated by successful comparison with non-trivial resistance hysteresis loops measured in cuprate YBCO and manganite PCLMO samples. Insights from the model simulations are used to propose a novel multi-level and non-volatile memory cell. We shall present results for an implementation of a 6-bit multi-leve memory cell device.