Berlin 2012 – wissenschaftliches Programm
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SYRS: Symposium Resistive Switching
SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)
SYRS 2.28: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Manipulating the aspect ratio of Si surface nanopattern with low energy ion sputtering and reactive ion etching — Hans Hofsäss, •Kun Zhang, Ulrich Vetter, Omar Bobes, and Christoph Brüsewitz — II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
A periodic self-forming surface nanostructure can be produced with low energy ion sputtering. The wavelength of such nanopattern can be controlled very well, by varying the energy and the incident angle of ion-beam. A low energy N2+ ion beam produces not only nanoripples on Si surface, but also forms a thin silicon nitride layer on the ridges of the ripples. This thin silicon nitride layer has a thickness from some nm to 20 nm (depending on the ion energy and the incident angle) and acts as an inert nanomask for reactive ion etching process, resulting in formation of deep grooves [1]. The depth of the grooves depends on the etching time. By combining the low energy N2+ ion beam sputtering and reactive ion etching, the formation of surface nanopattern with controllable average values of wavelength, ridge width and groove depth on Si surface can be realized. This surface nanostructured silicon with controllable features could be widely used in nanotechnology, including so-called black silicon for solar cells. Here, we will report on the formation of nanoripple patterns by low energy N2+ ion beam (≤ 10keV), and the modification of these nanopatterns by reactive ion etching. In addition, the optical properties of the nanostructured silicon surfaces will be discussed. [1] V. K. Smirnov et al., Nanotechnology 14 (2003)709.