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Berlin 2012 – scientific programme

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SYRS: Symposium Resistive Switching

SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)

SYRS 2.31: Poster

Thursday, March 29, 2012, 17:30–19:00, Poster E

Transport anisotropy of LaAlO3/SrTiO3 interfaces on chemically patterned SrTiO3 — •Michael Foerster1, Romain Bachelet1, Vladimir Laukhin1,2, Josep Fontcuberta1, Gervasi Herranz1, and Florencio Sanchez11Institut de Ciència de Materials de Barcelona ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Catalonia, Spain — 2Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain

A few years ago high mobility electronic transport was found at the interface between the wide bandgap insulators SrTiO3 and LaAlO3 [1]. This conductive layer is confined to a few unit cells around the interface and it appears when LaAlO3 layers with thickness above 3-4 unit cells are grown on SrTiO3. It is known that TiO2/LaO interfaces are conductive, while SrO/AlO2 interfaces are insulating.

Here we exploited this way to control the interface properties to produce large scale functional nanostructures. TiO2/AlO - SrO /LaO2 modulated interfaces have been prepared using thermally treated SrTiO3 surfaces with self-organized patterned chemical termination. The interface transport properties are found to be controlled according to these interface patterns. While the influence of the interface topology, e.g. terrace steps, is negligible, a strong transport anisotropy is observed when large-scale well oriented chemical patterns are realized. Our results show that bottom-up engineering of the interface chemical composition is a suitable strategy to influence the transport properties on large scales.

References [1] A. Ohtomo and H.Y. Hwang, Nature 427, 423 (2004).

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