Berlin 2012 – scientific programme

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SYRS: Symposium Resistive Switching

SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)

SYRS 2.47: Poster

Thursday, March 29, 2012, 17:30–19:00, Poster E

Monte Carlo Simulations of Silicon Sputtering by Argon Ions and an Approach for Comparison with Molecular Dynamic Results — René Feder, Frank Frost, Stefan G. Mayr, Horst Neumann, and •Carsten Bundesmann — Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig, Germany

Ion beam sputter processes deliver some intrinsic features influencing the growing film properties. Utilisation of these features needs to know how primary ion properties and geometrical process conditions influence the energy and spatial distribution of the sputtered and scattered particles. Beside complex experiments simulations are helpful to explain the correlation between primary parameters and thin film properties.

The paper presents first results of two simulation codes with completely different approaches: Monte Carlo (MC) calculations with help of the well known TRIM.SP code [1] and Molecular Dynamics calculations with an in-house developed code. First results of both simulation principles are compared for Argon ion bombardment on a Silicon target. Furthermore, a special experimental setup is outlined for validation of modelling. The setup allows the variation of ion beam parameters (ion species, ion energy, ion incidence angle on the target) and the measurement of the properties of sputtered and scattered particles.

Financial support by DFG within project BU2625/1-1 is gratefully acknowledged.

[1] J. P. Biersack, W. Eckstein, Appl. Phys. A 34, 73 (1984)