Berlin 2012 – wissenschaftliches Programm
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SYRS: Symposium Resistive Switching
SYRS 2: Poster: Resistive switching (jointly organized by DS, DF, KR, HL)
SYRS 2.49: Poster
Donnerstag, 29. März 2012, 17:30–19:00, Poster E
Ion beam assisted deposition of nano-structured C:Ni films — G. Abrasonis1, M. Krause1,2, A. Mücklich1, R. Heller1, K.-H. Heinig1, •S. Gemming1, and W. Möller1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany. — 2Institute of Physics,TU Dresden, Dresden, Germany.
Nanostructures influence material properties dramatically due to size, shape and interface effects. Thus the control of the structure at the nanoscale is a key issue in nanomaterials science. The interaction of hyperthermal ions with solids is confined to the nanometer scale. Thus, it can be used to control the morphology evolution during multiphase film deposition. Ion-induced displacements occur in a thin surface layer of the growing film where they increase the atomic mobility for the phase separation. Here the growth-structure relationship of C:Ni (~15 at.%) nanocomposite films grown by oblique incidence (~45°) ion beam assisted deposition is reported. The influences of the flux of an assisting Ar+ ion beam (0-140 eV) as well as of an elevated substrate temperature have been studied. The formation of elongated nickel nanoparticles is strongly promoted by the ion beam assistance. Moreover, the metal nanocolumns no longer align with the advancing surface, but with the incoming ions. A window of conditions is established within which the ion assistance leads to the formation of regular composition modulations with a well defined periodicity and tilt. As the dominating driving force for the pattern formation is of physical origin, this approach might be applicable to other immiscible systems.