Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

SYRS: Symposium Resistive Switching

SYRS 3: Resistive switching I (jointly organized by DS, DF, KR, HL)

SYRS 3.4: Talk

Friday, March 30, 2012, 10:15–10:30, H 0111

Resistive switching in different forming states of Ti/ Pr_0.48Ca_0.52MnO₃ junctions — •Chanwoo Park¹, Anja Herpers¹, Rainer Bruchhaus¹, Johan Verbeeck², Ricardo Egoavil², Francesco Borgatti³, Giancarlo Panaccione⁴, Francesco Offi⁵, and Regina Dittmann¹ — ¹PGI-7, FZ Jülich — ²EMAT, University of Antwerp, Belgium — ³ISMN-CNR, Bologna, Italy — ⁴Laboratorio Nazionale TASC-INFM-CNR, Trieste, Italy — ⁵CNISM and Dipartimento di Fisica, Università Roma Tre, Rome, Italy

We investigated the resistive switching (RS) characteristics of Ti/Pr_0.48Ca_0.52MnO₃ (PCMO) junctions. RS characteristics were observed after a first forming (1stF) procedure, which changes the initial resistance state to a high resistance state (HRS) which shows a clear area dependence. By performing Hard X-ray Photoelectron Spectroscopy for different resistive states, we found a change of the Ti2p peak intensity after the 1stF which is associated with the formation of TiO₂ at the interface. Moreover, the shape and position of the Mn2p peak hints on the reduction of Mn. The formation of TiO_x at the Ti/PCMO interface after the 1stF was confirmed by cross-sectional Transmission Electron Microscope investigations. The results indicate that the 1stF step is related to a redox process at the Ti/PCMO interface. Moreover, we were able to perform a second forming step which changes the HRS to the low resistance. The area dependence disappeared after the second forming. This implies that conducting filaments might form at the Ti/PCMO interface.