Berlin 2012 – scientific programme

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SYRS: Symposium Resistive Switching

SYRS 4: Resistive switching II (jointly organized by DS, DF, KR, HL)

SYRS 4.2: Talk

Friday, March 30, 2012, 11:15–11:30, H 0111

Pulse-induced resistive switching of CMOS embedded HfO₂-based 1T1R cells — •damian walczyk, christian walczyk, thomas bertaud, małgorzata sowińska, mindaugas lukosius, steffen kubotsch, thomas schroeder, and christian wenger — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.

Low-cost embedded nonvolatile memories (eNVMs) with high-density, high-speed, and low-power are of interest for many different system applications in Si-based CMOS technologies, including consumer electronics, high-end and mobile computing, various sensor and medical health care devices. The rising importance of embedded NVM technologies in recent years has pushed Resistance change Random Access Memory (RRAM) into the spotlight. However, despite numerous integration efforts, the driving mechanism for the resistive switching effect of HfO₂-based RRAM is still under debate [1]. Progress in the development has mainly been delayed due to the lack of control over the switching parameters. To achieve an application relevant endurance, the capability to control the resistance by an access device is addressed in this talk. Moreover, this work considers the pulse-induced resistive switching of memory cells with an area down to 1 × 1 µm². It is observed that the pulse width range for the set process is between 60 ns and 80 ns while the reset encompasses a pulse width range of 10-30 µs. Due to the intrinsic current compliance of the access transistor, low set currents of 10 µA and reset currents of 1 µA are obtained.

[1] C. Walczyk et al., IEEE Trans. Electron. Devices, vol. 58, no. 9, pp. 3124-3131 (2011).