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TT: Fachverband Tiefe Temperaturen

TT 13: Transport: Poster Session

TT 13.3: Poster

Montag, 26. März 2012, 15:00–19:00, Poster B

Quenching photoluminescence in semiconducting nanorods in contact with epitaxial graphene — •Christian Sorger¹, Daniel Waldmann¹, Johannes Jobst¹, Stefan Hertel¹, Adam Faust², Uri Banin², and Heiko B. Weber¹ — ¹Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, 91058 Erlangen, Germany — ²Institute of Chemistry, The Hebrew University, Jerusalem 91904 Israel

It is well known that the photoluminescence of semiconducting particles can be quenched in close vicinity to a metallic surface. In our experiment we deposit CdSe-nanorods in close contact to epitaxially grown graphene [1] and detect the photoluminescence on large areas. Substantial quenching is observed.

We are targeting the dependence of fluorescence quenching on the charge density in the graphene layer, which is tuned by a bottom gate [2]. Vice versa, the influence of photoexcitation on transport properties is investigated.
K. V. Emtsev et al. , Nature Materials 8, 203 (2009).
D. Waldmann et al. , Nature Materials 10, 357 (2011).