Berlin 2012 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 33: Superconductivity, Measuring Devices, Matter at Low Temperature: Poster Session

TT 33.24: Poster

Wednesday, March 28, 2012, 15:00–19:00, Poster B

Two concepts of introducing thin-film superconductivity in Ge and Si by use of Ga-ion implantation — •Richard Skrotzki^1,2, Thomas Herrmannsdörfer¹, Jan Fiedler¹, Viton Heera¹, Matthias Voelskow¹, Arndt Mücklich¹, Bernd Schmidt¹, Wolfgang Skorupa¹, Manfred Helm¹, and Joachim Wosnitza¹ — ¹Dresden High Magnetic Field Laboratory (HLD) and Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany — ²Department of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden, Germany

We report on two unconventional routes of embedding superconducting nanolayers in a semiconducting environment. Ion implantation and subsequent annealing have been used for preparation of superconducting thin-films of Ga-doped germanium (Ge:Ga) [1] as well as 10 nm thin amorphous Ga-rich layers in silicon (Si:Ga) [2]. Structural investigations by means of XTEM, EDX, RBS/C, and SIMS have been performed in addition to low-temperature electrical transport and magnetization measurements. Regarding Ge:Ga, we unravel the evolution of T_c with charge-charrier concentration while for Si:Ga recently implemented microstructuring renders critical-current densities or more than 50 kA/cm². Combined with a superconducting onset at around 10 K, this calls for onchip application in novel heterostructured devices. This work was supported by EuroMagNET, EU contract 228043.
R. Skrotzki et al., Low Temp. Phys. 37, 1098 (2011)
R. Skrotzki et al., Appl. Phys. Lett. 97, 192505 (2010)