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TT: Fachverband Tiefe Temperaturen

TT 45: Correlated Electrons: Poster Session

TT 45.24: Poster

Donnerstag, 29. März 2012, 15:00–19:00, Poster B

Single crystal growth of Yb(Rh_1−xNi_x)Si₂ : influence of chemical pressure and electron doping — •Elias Blumenröther, Hirale. S Jeevan, Yoshi Tokiwa, Maik Schubert, and Philipp Gegenwart — I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich Hund Platz 1, 37077 Göttingen, Germany

YbRh₂Si₂ is a well-known heavy fermion compound, which has been investigated intensively due to proximity to an antiferromagnetc field induced quantum critical point (QCP). Recent experimental and theoretical investigations propose that this system displays an unconventional QCP driven by localized moments. We report details of the single crystal growth and physical properties of non-isovalent partial substitution of Rh by Ni. We have grown single crystals of Yb(Rh_1−xNi_x)Si₂ for x = 0 to 1 using an Indium-flux method in an oxide crucible. The structure of the single crystals and their composition were investigated by Xray-diffraction and microprobe analysis, respectively. We will report resistivity, specific heat and magnetic susceptibility measurements for various doping concentrations. Ni substitution has a twofold effect: chemical pressure and doping with electrons. By comparison with isovalent Co substitution and Fe-(hole)-doping, conclusions concerning the influence of chemical pressure and the change in carrier concentration are drawn.

This work is supported by the DFG Reserach Unit 960 (Quantum Phase Transitions).