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T: Fachverband Teilchenphysik

T 66: Halbleiterdetektoren: Strahlenhärte und neue Materialien

T 66.8: Vortrag

Donnerstag, 1. März 2012, 18:30–18:45, ZHG 001

Diamond Pixel Detectors in High Radiation Environments — •Jieh-Wen Tsung¹, Mirek Havranek¹, Fabian Hügging Hügging¹, Harris Kagan², Michael Karagounis¹, Hans Krüger¹, and Norbert Wermes¹ — ¹Physikalisches Institut, Nußallee 12, Bonn, Germany — ²Department of Physics, The Ohio State University, 191 W. Woodruff Ave., Columbus, Ohio, U.S.A

Diamond is attractive for sensors of vertex detectors because of its strong radiation-hardness. Its tiny leakage current and smaller capacitance result in low noise. However, silicon (Si) gives larger signals, while its noise level is similar to diamond before irradiation. This situation changes in high radiation environments, e.g. super Large Hadron Collider, at where a particle fluence 10¹⁶ n_eq/cm² is expected. To compare the diamond and Si pixel detectors, their signal-to-noise ratio (SNR) versus irradiation is estimated. For the signals, the decreasing mean free path of charge carriers versus irradiation is measured using diamond pad detectors, and the results are applied to predict the signal deterioration. The noise is calculated based on a model of the pixel readout circuit, and also simulated using chip design software with the leakage current and input capacitance to the charge sensitive amplifier as key parameters. The input capacitance has never been clearly identified in pixel detectors, so a measuring chip (PixCap) has been developed to directly measure it. With all the mentioned ingredients, the SNR of diamond and silicon pixel detectors is estimated up to 10¹⁶/cm² fluence. Finally, we present the measurements of diamond and Si pixel detectors with the ATLAS FE-I4 pixel readout chip.