Göttingen 2012 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 67: Halbleiterdetektoren: Strahlenschäden

T 67.8: Vortrag

Freitag, 2. März 2012, 10:15–10:30, ZHG 001

Annealing study of defects at the Si-SiO₂ interface introduced by 12 keV X-rays — •Jiaguo Zhang¹, Eckhart Fretwurst¹, Robert Klanner¹, Ioana Pintilie², and Joern Schwandt¹ — ¹Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany — ²National Institute of Materials Physics, P. O. Box MG-7, Bucharest-Magurele, Romania

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second with duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to detect the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At these X-ray energies defects, i.e. fixed oxide charges and interface traps, will build up at the Si-SiO₂ interface over exposure time. We have investigated as function of the 12 keV X-ray dose the microscopic defects in test structures fabricated by CiS and Hamamatsu. Additionally, annealing studies have been carried out at 50^∘C, 60^∘C and 80^∘C for irradiated test structures. The frequency factors and activation energies of the defects have been determined so that the long term behaviour of irradiated sensors at room temperature can be predicted using the results of this study.