Mainz 2012 – scientific programme

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HK: Fachverband Physik der Hadronen und Kerne

HK 4: Instrumentation

HK 4.3: Talk

Monday, March 19, 2012, 14:45–15:00, P 2

Radiation damage modelling for developing an operating scenario for the microstrip detectors in the CBM experiment — •Sudeep Chatterji — GSI, Darmstadt, Germany

We present the first 3-D TCAD simulated results on Double Sided silicon Strip Detectors(DSSDs) using tools from SYNOPSYS. To determine the radiation hardness of these sensors, we have irradiated some of the prototypes at KRI Cyclotron facility, Russia. Our radiation damage model implemented in TCAD simulations is able to reproduce the irradiated data. Besides the static measurements, we have also extracted interstrip parameters relevant to understand strip isolation and cross-talk issues. Transient simulations have been performed to estimate the charge collection of irradiated sensors and the collected charge has been found to exactly mimic the variation of measured interstrip resistance with bias voltage. The extraced charge collection efficiency has been compared with test beam data. Controlled thermal annealing of irradiated DSSDs have been done to extract the beneficial and reverse annealing time constants and compared with Ziock parameterization. These time constants have been used to develop an operating scenario to understand the evolution of full depletion voltage with periods of annealing expected between the CBM data taking runs. Supported by EU-FP7 HadronPhysics3.