Stuttgart 2012 – wissenschaftliches Programm
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A: Fachverband Atomphysik
A 32: SYPC 1: From Atoms to Photonic Circuits 1
A 32.6: Vortrag
Donnerstag, 15. März 2012, 12:15–12:30, V47.01
Asymmetric-coupled vertical quantum dots: Towards a light controlled quantum gate — •Elisabeth Koroknay1, Christian Kessler1, Matthias Reischle1, Ulrich Rengstl1, Moritz Bommer1, Robert Roßbach1, Heinz Schweizer2, Michael Jetter1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, 70569 Stuttgart, Germany — 24. Physikalisches Institut, Pfaffenwaldring 57, 70569, Stuttgart, Germany
In this talk we show the route towards the realization of a laterally and vertically positioned triple dot structure consisting of a tunnel-coupled vertical asymmetric double quantum dot structure (ADQD) and a single dot (larger than the ADQD). The triple dot structure serves as a quantum gate with the ADQD as source dot and the large dot as target dot. The coupling between source and target is achieved by light induced dipole fields originating from the ADQD which influence via the Stark effect the target dot transition.
The quantum dot (QD) structures are grown by metal-organic vapor-phase epitaxy (MOVPE) on GaAs substrates. The ADQD consists of two vertically stacked differently sized InP QDs embedded in GaInP, grown lattice matched to GaAs. Time integrated and time-resolved photoluminescence (PL) measurements have been performed on ADQDs to investigate the coupling behavior. For the target QD the InGaAs material system was chosen to clearly differ in emission energy of the InP ADQD. Next to our growth efforts we present structural and optical analysis of the current status.