Stuttgart 2012 – scientific programme

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A: Fachverband Atomphysik

A 50: Interaction of matter with ions

A 50.4: Talk

Friday, March 16, 2012, 14:45–15:00, V57.05

Combined Radiation Effects of Protons and Electrons in Silicon Bipolar Junction Transistor — Chaoming Liu, •Xingji Li, Erming Rui, and Hongbin Geng — Harbin Institute of Technology, Harbin, China

This investigation compares individual radiation effects of 110keV electrons and 170keV protons with combined ones, including simultaneous and sequential radiation effects, caused by 110keV electrons together with 170keV protons, on the forward current gain of bipolar junction transistor. The experimental procedure for the simultaneous irradiation is that the 170keV protons and 110keV electrons irradiation are performed in the same time, while the procedure for the sequential irradiation is the protons and electrons irradiation are performed on same alternate exposure time. The combined exposures will produce both the ionization in the oxide layer (due to the 110keV electrons) and the displacement effect in Si bulk (due to the 170keV protons), resulting in the synergistic radiation effects on bipolar junction transistor. It is instructive to characterize the combined radiation damage caused by electrons and protons with lower energies based on analyzing the damage effects both in the oxide layer and the Si bulk. From the experimental data, the interaction between ionizing damage and displacement damage of bipolar junction transistor is discussed.