Stuttgart 2012 – scientific programme

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K: Fachverband Kurzzeitphysik

K 3: Licht- und Strahlungsquellen II und deren Anwendungen

K 3.1: Invited Talk

Monday, March 12, 2012, 16:30–17:00, V57.04

LPP light source development for EUV lithography — •Norbert Böwering — Cymer BV, 5503 LN Veldhoven, The Netherlands

Laser produced plasma (LPP) light source systems have been developed as the primary approach for extreme ultra-violet (EUV) scanner optical imaging of circuit features of sub-22 nm critical layer patterning in support of high-throughput semiconductor lithography. The components and the development of CO₂-laser based light sources for advanced lithography applications are described. A review is provided of development progress and productization, as well as of installation and operational status for high-volume manufacturing LPP EUV light sources of Cymer. EUV power and dose stability data are presented for test wafer exposures by pilot production systems with stable tin droplet generation, efficient gas-based debris mitigation system and large 5 sr normal-incidence light collector optics. Exposure power scaling to levels of above 100 W is shown as demonstrated by increased conversion efficiency in a separate configuration using a laser pre-pulse to optimize the plasma conditions. The lifetime of the collector is a critical parameter for such sources. It was significantly enhanced by use of protective cap layers on the multilayer coating, supporting uninterrupted operation for several weeks. An update is also given on the status of second-generation EUV source integration and on the product roadmap.

http://www.cymer.com