Stuttgart 2012 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 19: Quanteninformation: Festkörper und Photonen
Q 19.3: Talk
Monday, March 12, 2012, 17:00–17:15, V38.04
Silicon-Vacancy color centers in diamond nanowires — •Carsten Arend1, Elke Neu1, Jennifer Choy2, Birgit Hausmann2, Thomas Babinec2, Marko Loncar2, Martin Fischer3, Stefan Gsell3, Matthias Schreck3, and Christoph Becher1 — 1Universität des Saarlandes, FR 7.2 Experimentalphysik, D-66123 Saarbrücken — 2Harvard University, School of Engineering and Applied Sciences, Cambridge, MA 02138 — 3Universität Augsburg, Lehrstuhl für Experimentalphysik 4, D-86135 Augsburg
Color centers in diamond are promising sources for single photons because of their photostability and room temperature operation. Silicon-Vacancy (SiV)-centers are particularly interesting, since they feature narrow zero-phonon-lines (ZPLs) in the near infrared (738 nm), low phonon coupling and high brightness [1]. To gain high brightness single photon sources nanowires (NWs) in single crystal diamond have been used to significantly enhance the collection efficiency of color center fluorescence [2]. We here report for the first time on SiV-centers in diamond NWs. The NWs are produced by structuring a heteroepitaxial CVD diamond film containing in-situ created SiV-centers. SiV-centers in NWs feature count rates up to 4 Mcps and ZPLs down to 0.9 nm at room temperature. At cryogenic temperature, the fine structure splitting of the ZPL unambigously identifies the SiV-centers. Due to a reduced emission angle, these devices should allow for efficient photon collection using low NA systems.
E. Neu et al., New. J. Phys. 13, 025012 (2011)
T. Babinec et al., Nature Nanotech. 5, 195 (2010)