Dresden 2013 – wissenschaftliches Programm
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HK: Fachverband Physik der Hadronen und Kerne
HK 9: Instrumentation
HK 9.4: Vortrag
Montag, 4. März 2013, 12:00–12:15, HSZ-405
Development of radiation-hard double-sided silicon microstrip sensors for the CBM silicon tracking system — •Sudeep Chatterji — GSI, Darmstadt
We give an overview of the prototypes microstrip sensors fabricated for the CBM Silicon Tracking System at CiS, Erfurt and Hamamatsu, Japan. The full-size sensors are double-sided with double metal and have strips oriented under a stereo angle of ±7.50. Also test structures were produced with orthogonal strips. The strip pitch is 58 µm. The radiation load in the detector is expected to not exceed 1×1014 neqcm−2 in several years of operation, after which they would be replaced. The charge collection behaviour of the sensors has been studied in simulations using the TCAD Synopsys package. A design optimization has been worked out to reduce the Equivalent Noise Charge (ENC) and to maximize the breakdown voltage and Charge Collection Efficiency. Various isolation techniques have been explored and a detailed comparison has been studied to optimize the detector performance. An operating scenario for the CBM experimental run has been developed taking into account periods of shutdown, warm maintainance and cold maintainance. Transient simulations have been performed to estimate the charge collection performance of the irradiated detectors and simulations have been verified with experimental data. Supported by EU-FP7 HadronPhysics3 and BMBF.