Dresden 2013 – scientific programme

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T: Fachverband Teilchenphysik

T 63: Halbleiterdetektoren: Forschung und Entwicklung 3

T 63.5: Talk

Tuesday, March 5, 2013, 17:45–18:00, GER-007

Pixel Readout Development in 65 nm CMOS Technology — •Miroslav Havránek, Leonard Germic, Tomasz Hemperek, Tetsuichi Kishishita, Hans Krüger, Mikhail Lemarenko, and Norbert Wermes — University of Bonn, Bonn, Germany

Continuous trend of increasing luminosity of particle accelerators places severe constraints on detector tracking systems in terms of radiation hardness and ability to cope with high hit rates. One possible way for particle detectors to keep track with increasing luminosity is using of more advanced technologies. Ultra deep sub-micron CMOS technologies allow design of complex and high speed electronics with high integration density. In addition these technologies are inherently radiation hard. We present two prototypes of analog pixel front-end designed in 65 nm CMOS technology with applications oriented to upgrade of the ATLAS Pixel Detector. The silicon area of the pixel front-end prototypes is shared with other test circuits designed for applications in upgrade of the Pixel Vertex Detector of the Belle II experiment. Aspects of ultra deep sub-micron design and performance of the analog pixel front-end circuits will be presented.