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T: Fachverband Teilchenphysik

T 64: Halbleiterdetektoren: Forschung und Entwicklung 4

T 64.6: Vortrag

Mittwoch, 6. März 2013, 18:00–18:15, GER-007

BackSPAD - Developments: Latest Results — •Daniel Durini¹, Sascha Weyers¹, Martin Stühlmeyer¹, Andreas Goehlich¹, Werner Brockherde¹, Uwe Paschen¹, Holger Vogt¹, Simone Tisa², Alberto Tosi², and Franco Zappa² — ¹Fraunhofer IMS, Duisburg, Germany — ²Politecnico di Milano, Milan, Italy

In the recent years, a large amount of effort has been put into the development of Silicon Photomultipliers (SiPM) as a viable technology to replace the conventional photo multiplier tubes (PMT)in many low-light level applications. In parallel, a concept has been pursued where the Geiger avalanche diodes are integrated in the same substrate with the pixel-electronics, forming arrays of Single-Photon Avalanche Diodes (SPAD) smart pixels exploiting in this way the advantages of the CMOS technology combined with single-photon counting possibilities. One of the huge problems accompanying the increase of the in-pixel circuit complexity is the unavoidable diminishing of the SPAD pixel fill-factors, which tend to descend to below 4%. Aiming at improving the SPAD front-end performance, we pursue the development of Back-Side Illuminated SPAD (BackSPAD) smart-pixel structures in the frame of the EU-FP7-ICT-5 project *MiSPiA* (grant agreement No. 257646). BackSPAD array and the smart-pixel electronics are placed one over the other in close mechanical and electrical contact. The BackSPAD detectors are isolated from each other by deep trenches. The recent measurement results of the BackSPAD structures will be reported.