Dresden 2013 – scientific programme

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T: Fachverband Teilchenphysik

T 66: Halbleiterdetektoren: Strahlenhärte, neue Materialien und Konzepte 1

T 66.1: Group Report

Tuesday, March 5, 2013, 16:45–17:05, GER-009

A Charge Collection Study with Dedicated RD50 Charge Multiplication Sensors — •Christopher Betancourt, Thomas Barber, Marc Hauser, Karl Jakobs, Susanne Kühn, Ulrich Parzefall, and Sven Wonsak — Physikalisches Institut, Albert-Ludwigs Universitaet, Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg, Germany

Silicon strip detectors are an essential component of collider experiments. Along with silicon pixel detectors, they provide precision tracking near the interaction point and a primary means of momentum measurement for charged particles. A part of the operational concern for such a system is signal loss due to radiation damage.

This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co. Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. Charge collection measurements are performed before and after irradiation with a proton fluence of 1 ×10¹⁵ 1 MeV n_eq/cm² and neutron fluence ranging from 1-5 × 10¹⁵ 1 MeV n_eq/cm². Structures on these devices include varying diffusion times and energies for the implantation process, the use of intermediate biased or floating strips between the readout strips, and several different strip width and pitch geometries. The charge collection for these devices is studied as a function of the bias voltage, looking for indications of charge multiplication. Results are compared to standard float zone 300 µm thick silicon strip sensors having a strip width of 25 µm and pitch of 80 µm.