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T: Fachverband Teilchenphysik

T 66: Halbleiterdetektoren: Strahlenhärte, neue Materialien und Konzepte 1

T 66.5: Vortrag

Dienstag, 5. März 2013, 17:50–18:05, GER-009

X-ray induced radiation damage at the Si-SiO₂ interface of silicon sensors — •Jiaguo Zhang¹, Eckhart Fretwurst¹, Robert Klanner¹, Ioannis Kopsalis², and Joern Schwandt¹ — ¹Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany — ²School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Heroon Polytechniou 9, 11474 Athens, Greece

Silicon pixel sensors will be used for imaging experiments at the European X-ray Free Electron Laser (XFEL). In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. Hence, to develop such a radiation-hard silicon pixel sensor for the European XFEL a good understanding of X-ray induced radiation damage is necessary. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements on MOS capacitors and gate-controlled diodes, the oxide-charge density, the interface-trap density and the surface-current density have been measured for X-ray doses up to 1 GGy. The results have been used as input in TCAD simulations for the optimization of the pixel sensor. This talk will introduce the physical processes of X-ray induced radiation damage, review the important factors which impact on the formation of the defects in the SiO₂ and at the Si-SiO₂ interface, present the main results on the dose dependence of the oxide-charge density and the surface-current density, and summarize their influence on the electrical performance of silicon sensors.