Dresden 2013 – scientific programme

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T: Fachverband Teilchenphysik

T 67: Halbleiterdetektoren: Strahlenhärte, neue Materialien und Konzepte 2

T 67.4: Talk

Wednesday, March 6, 2013, 17:30–17:45, GER-009

Neutron irradiation studies with DEPFET devices — •Stefan Petrovics, Hans-Günther Moser, Jelena Ninkovic, Rainer Richter, Ladislav Andricek, Andreas Wassatsch, Andreas Ritter, and Christian Koffmane — Max-Planck-Institut für Physik - Halbleiterlabor

The upcoming upgrade of the Belle-Experiment at KEK will impose new challenges in radiation hardness for the utilized DEPFET-devices (Depleted p-channel Field Effect Transistor). The upgrade to Belle II will result in an increased luminosity and therefore in a significantly higher radiation dose up to 1 Mrad (10 kGy) per year which the DEPFET-devices need to withstand. Radiation damage through ionizing and non-ionizing radiation is possible. In the case of non-ionizing radiation point defects within the detector bulk will be created which will have an impact on the overall detector performance, i.e. leading to increased leakage currents and a change in full depletion voltage. Neutron irradiations with DEPFET devices were carried out in order to analyze the impact of radiation induced bulk damages on the DEPFET performance and to determine whether the DEPFET device will be able to withstand the resulting radiation damage after ten years of Belle II operations. The devices were irradiated at the JSI TRIGA reactor in Ljubljana.