Hannover 2013 – wissenschaftliches Programm
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A: Fachverband Atomphysik
A 39: Poster: Atomic systems in external fields
A 39.1: Poster
Donnerstag, 21. März 2013, 16:00–18:30, Empore Lichthof
Energy levels, oscillator strengths and transition probabilities for Si-like Zn XVII, Ga XVIII, Ge XIX and As XX — •Ahmed Abou El-Maaref1, Mohamed A Uosif1, Sami H Allam2, and Tharwat M El-Sherbini2 — 1Physics Department, Al-Azhar University, Assuit, Egypt — 2Laboratory of Lasers and New Materials, Physics Department, Faculty of Science, Cairo University, Giza, Egypt
Fine-structure calculations of energy levels, oscillator strengths, and transition probabilities for transitions among the terms belonging to 3s23p2, 3s3p3, 3s23p3d, 3s23p4s, 3s23p4p, 3s23p4d, 3s23p5s and 3s23p5p configurations of silicon-like ions Zn XVII, Ga XVIII, Ge XIX and As XX have been calculated using configuration-interaction version 3 (CIV3). We have also carried out calculations in the intermediate coupling scheme using the Breit-Pauli Hamiltonian. We compared our data with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels are also given