Hannover 2013 – scientific programme
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A: Fachverband Atomphysik
A 41: Poster: Electron scattering and recombination
A 41.5: Poster
Thursday, March 21, 2013, 16:00–18:30, Empore Lichthof
Spectroscopic investigation of resonant recombination processes on highly charged silicon — •Thomas M. Baumann, Zoltan Harman, Christian Beilmann, Julian Stark, Paul H. Mokler, Joachim Ullrich, and Jose R. Crespo Lopez-Urrutia — Max-Planck-Institut für Kernphysik, Heidelberg, Germany
Spectroscopic studies of inter-shell (K-L) resonant electronic recombination processes for He-like to O-like Si ions (Si12+ to Si6+) are presented and compared to theoretical predictions obtained from MCDF and FAC calculations. These measurements were performed at the HYPER-EBIT, the new cryogenic electron beam ion trap of the MPIK. The charge state evolution and charge-breeding process in this machine was further studied using the time resolved evolution of the resonant recombination spectra. Strong contributions of higher-order recombination processes (trielectronic recombination, TR) are compared to lines resulting from first order dielectronic recombination (DR) using the strength ratio STR/SDR. For electronic recombination into B-like Si ions this ratio is in agreement with theory. For C-like Si, the measured value of STR/SDR=1,2±0,1 is about half the theoretical value. This deviation can be explained by barely resolvable contributions from long-lived metastable states in the recombining C-like ions.