Hannover 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
Q: Fachverband Quantenoptik und Photonik
Q 43: Poster II
Q 43.18: Poster
Wednesday, March 20, 2013, 16:00–18:30, Empore Lichthof
Photoluminescence excitation and spectral hole burning spectroscopy of silicon-vacancy centers in diamond — •Carsten Arend1, Hadwig Sternschulte2, Doris Steinmüller-Nethl2, and Christoph Becher1 — 1Universität des Saarlandes, Experimentalphysik, D-66123 Saarbrücken — 2rho-BeSt Coating Hartstoffbeschichtungs GmbH, 6020 Innsbruck
Silicon-vacancy (SiV) centers in diamond are promising sources for single photons because they provide narrow zero-phonon-lines (ZPLs) in the near infrared (738 nm), high photostability, weak phonon coupling and high brightness [1]. At cryogenic temperatures, the ZPL shows a four line fine structure due to the doubly split ground and excited states. We here report on the results of photoluminescence excitation (PLE) spectroscopy where we scan a narrow-band laser across the fine structure lines and detect fluorescence on the phonon sidebands. We measure linewidths and splittings of an ensemble of SiV centers in a high quality, homoepitaxial CVD film and obtain linewidths of about 10 GHz as compared to a lifetime limited width in the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by spectral diffusion. We report on spectral hole burning spectroscopy which enables measurement of the homogeneous linewidth.
E. Neu et al., New. J. Phys. 13, 025012 (2011)