Hannover 2013 – wissenschaftliches Programm

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Q: Fachverband Quantenoptik und Photonik

Q 9: Photonics I

Q 9.3: Vortrag

Montag, 18. März 2013, 14:30–14:45, A 310

Atomic defects in silicon carbide LEDs as a perspective single photon source — •Franziska Fuchs¹, Victor Soltamov², Stefan Väth¹, Pavel Baranov², Eugeny Mokhov², Georgy Astakhov¹, and Vladimir Dyakonov^1,3 — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia — ³ZAE Bayern, 97074 Würzburg

Single photon sources, reliably emitting on demand, are necessary for e.g. optical quantum computers. For this purpose, several systems seem suitable, including atoms, molecules, quantum dots and color centers in diamond. But all these systems are difficult to implement, since they either only work at low temperatures, or do not emit at typical wavelengths used in existing telecommunication infrastructure. We suggest another system - silicon vacancy defects in silicon carbide, emitting photons in the near infrared [1]. We fabricated light emitting diodes based on intrinsic defects in silicon carbide. The room temperature electroluminescence reveals two strong emission bands in visible and NIR, the latter assigned to silicon vacancy defects. Our approach can be used to realize an electrically driven single photon source for quantum telecommunication.

[1]Riedel et al.: Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide, Phys. Rev. Lett.109,226402(2012)