Jena 2013 – scientific programme

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P: Fachverband Plasmaphysik

P 11: Poster: Niedertemperaturplasmen

P 11.8: Poster

Wednesday, February 27, 2013, 16:30–18:30, Poster EG

Coupling effects in inductive discharges with RF substrate biasing — •Julian Schulze, Edmund Schüngel, and Uwe Czarnetzki — Ruhr-Universität Bochum

Hybrid combinations of capacitive and inductive radio frequency discharges are frequently used for plasma etching, since they allow to realize a high ion flux and a high ion energy at the substrate. The idea is that the ion flux can be controlled separately from the ion energy by tuning the power applied to the coil, while the ion energy is controlled by the power applied to the electrode. Here, low pressure inductively coupled plasmas (ICP) operated at 27.12 MHz with capacitive substrate biasing (CCP) at 13.56 MHz are investigated by Phase Resolved Optical Emission Spectroscopy, voltage, and current measurements. Three coupling mechanisms are found potentially limiting this separate control of ion energy and flux [1]: (i) Sheath heating due to the substrate biasing affects the electron dynamics even at high ratios of ICP to CCP power. At fixed CCP power, (ii) the substrate sheath voltage and (iii) the amplitude as well as the frequency of Plasma Series Resonance (PSR) oscillations of the RF current are affected by the ICP power. [1] J. Schulze et al. (2012) Appl. Phys. Lett. 100 024102