Jena 2013 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 18: Poster: Plasmatechnologie

P 18.7: Poster

Donnerstag, 28. Februar 2013, 14:00–16:00, Poster EG

Silicon dioxide coatings from dielectric barrier discharge in a two step process — •Sebastian Dahle^1,2, Henning Munkert¹, Wolfgang Viöl², and Wolfgang Maus-Friedrichs^1,3 — ¹Institut für Energieforschung und physikalische Technologien, TU Clausthal — ²Hochschule für angewandte Wissenschaft und Kunst — ³Clausthaler Zentrum für Materialtechnik, TU Clausthal

The coating of the model substrate titanium dioxide with silicon dioxide has been investigated by means of X-ray Photoelectron Spectroscopy, Metastable Induced Electron Spectroscopy, Ultraviolet Photoelectron Spectroscopy and Atomic Force Microscopy. The silicon was deposited using the gaseous precursor silane, which was diluted in 97% nitrogen for safer handling. The precipitation of the precursors before deposition through oxidation reactions was avoided by cutting the deposition process into two steps. In the first step, silicon was deposited in the form of silicon nitride. In the second step, the film was transformed into stoichiometric silicon dioxide by a second plasma treatment.