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P: Fachverband Plasmaphysik

P 4: Plasmatechnologie I

P 4.2: Vortrag

Montag, 25. Februar 2013, 17:00–17:15, HS 2

Improving the Electronic Transport and Structural Properties of Magnetron Sputtered ZnO:Al and ZnMgO:Al Films by Reducing the Particle Energy — •André Bikowski and Klaus Ellmer — Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany

We deposited ZnO:Al and ZnMgO:Al films by DC and RF (13.56 MHz and 27.12 MHz) magnetron sputtering for substrate temperatures between 25°C and 500°C. X-ray diffraction measurements were used to determine the crystalline quality. Conductivity and Hall measurements revealed the carrier concentration and Hall mobilities.

For sputtering processes it is known that the growing films are bombarded by high energetic species, especially negative ions. The maximum energy of these high energetic species is directly correlated to the plasma excitation frequency. For all three discharge frequencies a similar behavior for the resistivities of the films has been observed: a decrease up to an optimum substrate deposition temperature and an increase with further increase of the temperature up to 500°C. The minimum obtainable resistivity is decreasing with increasing plasma excitation frequency, which can be explained as a result of the reduced maximum energy, the high energetic negative oxygen ions have due to a decreasing target voltage with increasing plasma excitation frequency. Our results show the decisive role of the particle energies in plasma deposition processes for electronic and structural properties of thin films.