Jena 2013 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 4: Plasmatechnologie I

P 4.5: Vortrag

Montag, 25. Februar 2013, 17:45–18:00, HS 2

Scaling parameter in plasma-enhanced CVD of SiO₂ thin films in atmospheric pressure dielectric barrier discharges — •S. Welzel¹, S.A. Starostin², H. de Vries², M.C.M. van de Sanden^1,3, and R. Engeln¹ — ¹Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands — ²FUJIFILM Manufacturing Europe B.V., P.O. Box 90156, 5000 LJ Tilburg, The Netherlands — ³Dutch Inst. for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein, The Netherlands

Large-area roll-to-roll processing of polymeric substrates in diffusive, high-current dielectric barrier discharges containing organo-silicon precursors in industrially relevant air-like gas mixtures have been shown to yield high-quality SiO₂-like barrier layers. To better understand the link between plasma chemistry and the deposition process, studies of the gas phase composition using ex-situ Fourier-transform infrared absorption spectroscopy were carried out. A clear transition in the downstream gas phase can be observed as a function of injected power and hence the level of precursor consumption. Broadly speaking, a typical H-N-O chemistry in the presence of traces of hydrocarbons is found under full precursor consumption whereas distinct precursor fragments could be identified for HMDSO and TEOS at low average power densities. It transpires that the CO density in the gas phase is closely linked with the growth rate of the SiO₂ films. More importantly, all trends observed can be described by a scaling parameter (mean energy). This approach allows to define a parameter range for good quality films that can be normalised to a ‘reactor constant’.