Regensburg 2013 – scientific programme
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BP: Fachverband Biologische Physik
BP 13: Imaging
BP 13.7: Talk
Tuesday, March 12, 2013, 11:15–11:30, H44
Motion induced oscillations of Physarum polycephalum detected by AlGaN-GaN High Electron Mobility Transistors — •Thomas Lippelt1,2, Hartmut Witte1, Marcus J. B. Hauser2, and Alois Krost1 — 1Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Halbleiterepitaxie — 2Otto-von-Guericke-Universität Magdeburg, Inst. Exp. Phys., Abt. Biophysik
Due to the high sensitivity and biocompatibility of planar AlGaN/GaN High Electron Mobility Transistors (HEMTs) arrangements, such a device may be used as a biosensor in vast, living systems like amoebal cells, for sensing cellactivity. The scope of AlGaN/GaN HEMT structures for in situ detection of cell movement and growth of extended, living organisms like slime molds was studied in this contribution. As a object of investigation, we chose the Physarum polycephalum, a slime mold which represents one giant single cell with remarkable abilities to build network-like structures. While migrating over the HEMT sensing area, the slime mold was video monitored and the source-drain-impedance at 10 kHz has been recorded. By correlating the gray values of the video pictures and the source-drain-impedance it was found that the periodic cell movements affect the source-drain-impedance and cause oscillations with characteristic cycle periods from 100s to 140s.