Regensburg 2013 – wissenschaftliches Programm
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CPP: Fachverband Chemische Physik und Polymerphysik
CPP 14: Crystallization, Nucleation and Self Assembly I
CPP 14.7: Vortrag
Dienstag, 12. März 2013, 11:00–11:15, H39
Real-time GISAXS-study of DIP thin film growth — •Christian Frank1, Jiří Novák1, Rupak Banerjee1, Stefan Kowarik2, Alexander Gerlach1, and Frank Schreiber1 — 1University of Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany — 2Humbold University of Berlin, Newtonstr. 15, 12489 Berlin, Germany
We present a real-time in situ grazing incidence small angle X-ray scattering (GISAXS) study on growth of diindenoperylene (DIP) [1] thin films on SiOx substrates at various growth rates and substrate temperatures. DIP is a typical candidate for an active material in organic photo-voltaic and device applications. It is therefore important to understand how different growth parameters influence the evolution of the thin film morphology. By employing high brilliance synchrotron radiation and most recent CCD-area detectors we were able to monitor specular [2] and diffuse growth-oscillations simultaneously and in real-time. While the specular scattering contains information about crystallinity and morphology perpendicular to the sample surface, GISAXS data reflect also the lateral correlation lengths of surface features of thin films [3]. In this way we are able to monitor formation and coalescence of molecular islands during the layer-by-layer growth and the transition to the 3-D growth.
A. C. Dürr et al., Phys. Rev. Lett. 90 (2003), 016104;
[2] S. Kowarik et al., Eur. Phys. J. Special Topics 167 (2009), 11;
[3] S. K. Sinha et al., Phys. Rev. B 38 (1988), 2297