Regensburg 2013 – scientific programme

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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 24: Organic Semiconductors

CPP 24.11: Talk

Wednesday, March 13, 2013, 12:30–12:45, H40

Particularities of Charge Carrier Localization in (DOEO)₄[HgBr₄]·TCE Single Crystals — •Alisa Chernenkaya^{1, 2}, Katerina Medjanik¹, Aleksandr Kotov², Andrei Gloskovskii³, Oksana Koplak², Eduard Yagubskii², Gerd Schönhense¹, and Roman Morgunov² — ¹Inst. für Physik, Univ. Mainz, Germany — ²Inst. of Problems of Chem. Phys., Rus. Acad. of Science, Russia — ³HASYLAB/DESY, Hamburg, Germany

The combination of classical conductivity measurements with electron spin resonance (ESR) spectroscopy, hard X-ray photoelectron spectroscopy (HAXPES, experiment has been performed at PETRA III (beamline P09)) and near edge X-ray absorption fine structure (NEXAFS) make it possible to characterize electronic processes around the critical temperatures in the organic charge transfer salts. We discuss the example of (DOEO)₄[HgBr₄]·TCE that was studied by means of the methods mentioned above [1, 2]. It was found that the charge carrier localization begins at T = 140 K and at T ≤ 70 K there is clear evidence of two types of centers. Electrons in the crystal give different signals below the critical temperatures: there is an additional line in ESR spectra, a sharp jump in the temperature dependence of SQUID data and shifts of core-level positions in the HAXPES spectra.

Funded via DFG (Transregio SFB TR49) and BMBF (05K 12 UM2).

[1] A. Bardin et al., Coord. Chem., 32, 88 (2006)

[2] A. Chernenkaya et al., Synth. Met., submitted