Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 12: Poster 1

DF 12.47: Poster

Dienstag, 12. März 2013, 10:30–13:30, Poster D

The influence of p- and n-doping on the intrinsic properties of the Heusler compound Fe₂VAl — •Franziska Seifert^1,2, Christian G.F. Blum¹, Frank Steckel¹, Christian Hess¹, Bernd Büchner¹, Sabine Wurmehl¹, Stefan Martin², and David Rafaja² — ¹Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden — ²TU Bergakademie Freiberg, Germany

The Heusler compound Fe₂VAl is considered as a non-magnetic thermoelectric material. In this work, we studied the intrinsic properties of the Heusler compound Fe₂VAl and the influence of p- and n-doping on the intrinsic materials properties of the corresponding Si and Ti doped compounds using single crystals. Electron back scattering diffraction reveals the presence of a V-rich secondary phase in particular in crystals with Si and in the parent compound. The depletion of V from the Fe₂VAl matrix apparently leads to localized Fe moments and to ferromagnetism in the corresponding samples. Interestingly, the sample with Ti and less V depletion shows a significant enhancement of the figure of merit compared to the other samples.