Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 12: Poster 1

DF 12.56: Poster

Dienstag, 12. März 2013, 10:30–13:30, Poster D

Tunnel magneto-Seebeck effect in tunnel junctions with perpendicular magnetic anisotropy — •Tim Eggebrecht¹, Marvin Walter¹, Vladyslav Zbarsky¹, Markus Münzenberg¹, Volker Drewello², Karsten Rott², Günter Reiss², Andy Thomas², Patrick Peretzki³, Michael Seibt³, Michael Czerner⁴, Michael Bachmann⁴, and Christian Heiliger⁴ — ¹I. Physikalisches Institut, Universität Göttingen — ²Department of Physics, Bielefeld University — ³IV. Physikalisches Institut, Universität Göttingen — ⁴I. Physikalisches Institut, Universität Giessen

In CoFeB/MgO/CoFeB tunnel junctions (MTJs) with in-plane magnetic anisotropy the tunnel magneto-Seebeck effect (TMS) has already been observed. Recently, MTJs with perpendicular magnetic anisotropy (PMA) were fabricated by reducing the thickness of the two CoFeB layers. The thickness has to be lower than 1.3 nm, as observed by other groups. These MTJs with 4 monolayers MgO barrier show a TMR of more than 40 % and a very low switching current density of 2· 10⁵ A/cm².

In this work, the tunnel magneto-Seebeck effect is studied in junctions with in-plane and perpendicular magnetic anisotropy. The heating is achieved with a diode laser which delivers powers of up to 150 mW. The influence of the thin CoFeB layers and the MgO barrier on the TMS is studied.