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DF: Fachverband Dielektrische Festkörper

DF 16: Dielectric and ferroelectric thin films

DF 16.2: Vortrag

Mittwoch, 13. März 2013, 11:00–11:20, H11

Controlling conductivity at domain walls in BiFeO3 thin films — •Ji Hye Lee, Akash Bhatnagar, Young Heon Kim, Dietrich Hesse, and Marin Alexe — Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany

The study of domain walls regarded as natural interfaces in ferroic materials has been brought into attention due to their abnormal properties compared to the host materials. One of these materials, multiferroic BiFeO3 (BFO), which shows high transition temperature of both ferroic order parameters, has been intensively explored because of its unique characteristics of the domain walls, such as increased magnetoresistance, remarkable photovoltaic effect and enhanced conductivity. However, until now there have been only few attempts to control and tune the physical properties of domain walls in a designed way. Among them, tuning the conduction at domain walls is one of the most effective ways with high potential for future applications. The present talk will cover the unusual behavior of domain walls in BFO, especially regarding the abnormal conductivity. We will show several approaches to achieve tuning and control of the domain wall conductivity by doping. Temperature dependent behavior of domain wall conductivity conducted by an SPM based microscopic technique as well as macroscopic measurements have been used to unveil the role of oxygen vacancies and the effects of foreign atoms (by chemical doping) in the conduction mechanism of domain walls and host material.