Regensburg 2013 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 16: Dielectric and ferroelectric thin films
DF 16.3: Vortrag
Mittwoch, 13. März 2013, 11:20–11:40, H11
Ferroelectric switching kinetics controlled by reversible elastic strain — •Kathrin Doerr1,2, Andreas Herklotz1,2, Er-Jia Guo1,2, Ludwig Schultz2, Hans Christen3, and Michael Biegalski3 — 1MLU Halle-Wittenberg, Institute for Physics, 06099 Halle, Germany — 2IFW Dresden, Postfach 270116, 01171 Dresden, Germany — 3Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA
Ferroelectricity is known to couple strongly to distortions of the crystallographic lattice. It is natural to expect a strain dependence of the switching dynamics. To overcome the limitation by varying defect states in several different films, we have introduced the application of piezoelectric substrates for reversible strain control in epitaxial ferroelectric films. This enabled the study of switching times in capacitors comprised of epitaxial BiFeO3 and PbZr0.52Ti0.48O3 (PZT) films in reversibly controlled strain states using pulsed measurements of the switched polarization. The strain effect is found to be fundamentally different in low and high electric fields identified here as creep and depinning regimes of domain wall motion, respectively.