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DF: Fachverband Dielektrische Festkörper
DF 19: Poster 2
DF 19.12: Poster
Mittwoch, 13. März 2013, 15:00–17:30, Poster B2
Restoring the k-value in damaged ultra-low k materials — •Oliver Böhm1,2, Roman Leitsmann2, Philipp Plänitz2, Thomas Oszinda3, and Michael Schreiber1 — 1Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz — 2AQcomputare GmbH, Annaberger Str. 240, 09125 Chemnitz, Germany — 3GLOBALFOUNDRIES Dresden Module Two GmbH & Co. KG, Germany
The decreasing feature size of integrated circuits results in a smaller distance between the conduction layers, which is accompanied by an increasing resistance capacitance (RC) delay. To reduce this effect materials with an ultra-low dielectric constant can be used. However, the technical application of ultra-low k (ULK) materials is connected to several problems. After the etching of trenches or vias typically a considerable amount of carbon depletion and subsequently the formation of OH-groups can be observed. This results in moisture uptake and consequently in a strongly increased dielectric constant. To restore the k-value, a post-etch treatment is necessary.
In this study we use state of the art density functional theory (DFT) combined with a nudged elastic band (NEB) method to investigate different silylation processes. The efficiency of several silazanes and siloxanes will be compared. Furthermore, the influence of other post-etch treatments on the k-restoring will be briefly discussed. Finally, based on the obtained results an improved scheme for the k-restoring process of ultra-low k materials will be proposed.