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DF: Fachverband Dielektrische Festkörper

DF 19: Poster 2

DF 19.1: Poster

Mittwoch, 13. März 2013, 15:00–17:30, Poster B2

The electronic structure of tetragonal CuO — •Simon Moser^1,2, Luca Moreschini², Davide Innocenti^2,3, Young Jun Chang^2,4, Aaron Bostwick², Eli Rotenberg², and Marco Grioni¹ — ¹Ecole Polytechnique Federale de Lausanne — ²Advanced Light Source, Lawrence Berkeley National Laboratory — ³University of Rome Tor Vergata — ⁴University of Seoul

The cupric oxide CuO exhibits an insulating ground state with a correlation-induced charge-transfer gap and antiferromagnetism. It is, in principle, the most straightforward parent compound of the doped cuprates, and therefore has been theoretically studied as a model material for high temperature superconductivity.

Bulk CuO crystallizes in a low-symmetry monoclinic form, in contrast to the rocksalt structure typical of late 3d transition metal monoxides. It was recently synthesized by epitaxial growth on SrTiO₃ substrates in a higher symmetry tetragonal structure with elongated c-axis (Siemons et al. PRB 79, 2009). Extrapolating the behavior of other 3d transition metal monoxides, this phase of CuO is predicted to have a much higher Neel temperature than its bulk counterpart.

At beamline 7 of the Advanced Light Source, we have grown tetragonal CuO thin films by pulsed laser deposition and investigated their electronic structure by angle-resolved photoelectron spectroscopy (ARPES). These measurements represent the first mapping of the band structure of this new material, not available in bulk phase, and will serve as a reference point for future doping experiments.