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DF: Fachverband Dielektrische Festkörper

DF 21: Resistive Switching (jointly with DF, KR, HL)

DF 21.2: Vortrag

Freitag, 15. März 2013, 09:45–10:00, H32

Resistive switching properties in ion beam modified SrTiO₃ — •Jura Rensberg, Benjamin Roessler, Christian Katzer, Frank Schmidl, and Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Germany

Resistive switching phenomena, which are for instance observed in perovskite-type transition metal oxides, attract intensive attention for their potential application in future nonvolatile memory. Strontium titanate (SrTiO₃) exhibits bipolar resistive switching between a high- and a low-resistance state when applying an appropriate electric field. It is often proposed that the underlying mechanism for bipolar resistive switching in SrTiO₃ originates from oxygen-vacancy migration along filaments based on extended defects such as dislocations or grain boundaries.
Here we report on well-defined damage formation due to ion irradiation which allows a better control of the lateral and vertical defect arrangements and concentrations. Therefore, we deposited 100 nm single crystalline SrTiO₃ thin films with low intrinsic defect concentration on niobium doped SrTiO₃ substrates by pulsed laser deposition and implanted these samples with swift heavy gold ions. After irradiation the films were characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Under ion irradiation, the as-deposited crystalline films undergo amorphisation due to the formation and overlap of amorphous tracks. The electrical properties of SrTiO₃, i.e. the resistive switching properties are discussed in terms of damage concentration.